Maxim Integrated: Питание: драйверы управления затвором
Товаров: 284
Артикул
Цены
Производитель
Серия
Упаковка
Driven Configuration
Channel Type
Number of Drivers
Gate Type
Напряжение питания
Logic Voltage - VIL, VIH
Current - Peak Output (Source, Sink)
Вход
Rise / Fall Time (Typ)
Рабочая температура
Тип монтажа
Корпус
Заводской корпус
High Side Voltage - Max (Bootstrap)
1 918.71 ₽
10 867.00 ₽
25 694.00 ₽
50 658.21 ₽
100 606.51 ₽
250 576.68 ₽
500 554.80 ₽
Maxim Integrated
High-Side
Single
1
N-Channel MOSFET
5 V ~ 26 V
0.6V, 2V
Non-Inverting
-40 ~ 150°C (TJ)
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
8-uMAX
Цена по запросу
Maxim Integrated
Tube
Half-Bridge
Independent
2
N-Channel MOSFET
4.5 V ~ 17 V
0.8V, 2V
Inverting
20ns, 20ns
0 ~ 150°C (TJ)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
1 548.84 ₽
10 521.00 ₽
25 487.19 ₽
50 471.28 ₽
Maxim Integrated
Low-Side
Independent
2
N-Channel, P-Channel MOSFET
4.5 V ~ 18 V
0.8V, 2V
2A, 2A
Inverting
25ns, 20ns
0 ~ 70°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
Цена по запросу
Maxim Integrated
Low-Side
Independent
2
N-Channel, P-Channel MOSFET
4.5 V ~ 18 V
0.8V, 2.4V
1.5A, 1.5A
Non-Inverting
20ns, 20ns
-40 ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
1 707.92 ₽
10 672.13 ₽
25 626.39 ₽
50 606.51 ₽
Maxim Integrated
Tube
Low-Side
Independent
2
N-Channel, P-Channel MOSFET
4.5 V ~ 18 V
0.8V, 2.4V
1.5A, 1.5A
Non-Inverting
20ns, 20ns
0 ~ 70°C (TA)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
1 1032.05 ₽
10 980.35 ₽
25 688.04 ₽
50 654.23 ₽
100 497.14 ₽
250 473.27 ₽
500 439.47 ₽
Maxim Integrated
Low-Side
Single
1
N-Channel, P-Channel MOSFET
4.5 V ~ 18 V
0.8V, 2.4V
6A, 6A
Non-Inverting
25ns, 25ns
-40 ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
Цена по запросу
Maxim Integrated
High-Side
Single
1
N-Channel MOSFET
5 V ~ 26 V
0.6V, 2V
Non-Inverting
-40 ~ 150°C (TJ)
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
8-uMAX
1 2237.11 ₽
10 2125.75 ₽
25 1549.07 ₽
50 1471.52 ₽
100 1032.05 ₽
250 1024.10 ₽
Maxim Integrated
Half-Bridge
Independent
2
N-Channel MOSFET
8 V ~ 12.6 V
0.8V, 2V
2A, 2A
Inverting, Non-Inverting
65ns, 65ns
-40 ~ 150°C (TJ)
Surface Mount
12-WQFN Exposed Pad
12-TQFN (4x4)
125V
1 359.93 ₽
10 342.03 ₽
25 248.57 ₽
50 236.64 ₽
100 165.05 ₽
250 163.06 ₽
Maxim Integrated
Low-Side
Independent
2
N-Channel MOSFET
4 V ~ 14 V
0.8V, 2.1V
4A, 4A
Non-Inverting
40ns, 25ns
-40 ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
1 544.86 ₽
10 517.02 ₽
25 481.23 ₽
50 467.31 ₽
Maxim Integrated
Low-Side
Independent
2
N-Channel, P-Channel MOSFET
4.5 V ~ 18 V
0.8V, 2.4V
1.5A, 1.5A
Non-Inverting
20ns, 20ns
0 ~ 70°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
1 548.84 ₽
10 521.00 ₽
25 487.19 ₽
50 471.28 ₽
Maxim Integrated
Low-Side
Independent
2
N-Channel, P-Channel MOSFET
4.5 V ~ 18 V
0.8V, 2V
2A, 2A
Inverting, Non-Inverting
25ns, 20ns
0 ~ 70°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
Цена по запросу
Maxim Integrated
Low-Side
Independent
2
N-Channel, P-Channel MOSFET
4.5 V ~ 18 V
0.8V, 2.4V
1.5A, 1.5A
Inverting, Non-Inverting
20ns, 20ns
-40 ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
1 576.68 ₽
10 548.84 ₽
25 511.06 ₽
50 495.15 ₽
Maxim Integrated
Tube
Low-Side
Independent
2
N-Channel, P-Channel MOSFET
4.5 V ~ 18 V
0.8V, 2.4V
1.5A, 1.5A
Inverting
20ns, 20ns
-40 ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
1 763.60 ₽
10 725.82 ₽
25 509.07 ₽
50 483.22 ₽
100 367.88 ₽
250 349.98 ₽
500 324.13 ₽
Maxim Integrated
Tube
Low-Side
Single
1
N-Channel, P-Channel MOSFET
4.5 V ~ 18 V
0.8V, 2.4V
6A, 6A
Non-Inverting
25ns, 25ns
0 ~ 70°C (TA)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
1 1026.09 ₽
10 974.39 ₽
25 908.76 ₽
50 878.94 ₽
Maxim Integrated
Tube
Low-Side
Independent
2
N-Channel, P-Channel MOSFET
4.5 V ~ 18 V
0.8V, 2V
2A, 2A
Non-Inverting
25ns, 20ns
0 ~ 70°C (TA)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
Цена по запросу
Maxim Integrated
Low-Side
Independent
2
N-Channel MOSFET
4 V ~ 15 V
0.8V, 2.1V
4A, 4A
Non-Inverting
32ns, 26ns
-40 ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC Exposed Pad
1 1596.80 ₽
10 1517.26 ₽
25 1105.63 ₽
50 1049.95 ₽
100 737.75 ₽
250 729.79 ₽
Maxim Integrated
Half-Bridge
Independent
2
N-Channel MOSFET
8 V ~ 12.6 V
0.8V, 2V
2A, 2A
Non-Inverting
65ns, 65ns
-40 ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
175V
1 1741.96 ₽
10 1654.47 ₽
25 1207.04 ₽
50 1147.39 ₽
100 803.37 ₽
250 799.39 ₽
Maxim Integrated
Low-Side
Synchronous
2
N-Channel MOSFET
4.5 V ~ 15 V
3A, 3A
RC Input Circuit
10ns, 10ns
-40 ~ 150°C (TJ)
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
8-uMax-EP
1 1851.33 ₽
10 1757.87 ₽
25 1282.61 ₽
50 1218.98 ₽
100 855.07 ₽
250 847.12 ₽
Maxim Integrated
Low-Side
Independent
2
N-Channel MOSFET
4 V ~ 15 V
0.8V, 2.1V
4A, 4A
Inverting, Non-Inverting
32ns, 26ns
-40 ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
Цена по запросу
Maxim Integrated
Low-Side
Independent
2
N-Channel MOSFET
4 V ~ 15 V
0.8V, 2.1V
4A, 4A
Non-Inverting
32ns, 26ns
-40 ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
1 548.84 ₽
10 517.02 ₽
25 413.62 ₽
50 393.73 ₽
100 361.91 ₽
250 344.02 ₽
500 258.51 ₽
Maxim Integrated
Half-Bridge
Synchronous
2
N-Channel MOSFET
4.2 V ~ 5.5 V
2A, 2.7A
Non-Inverting
10ns, 8ns
-40 ~ 150°C (TJ)
Surface Mount
8-WQFN Exposed Pad
8-TQFN (3x3)
24V
1 574.69 ₽
10 546.85 ₽
25 509.07 ₽
50 491.17 ₽
Maxim Integrated
Tube
Half-Bridge
Independent
2
N-Channel MOSFET
4.5 V ~ 17 V
0.8V, 2V
Inverting
20ns, 20ns
0 ~ 150°C (TJ)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
1 624.40 ₽
10 592.59 ₽
25 552.81 ₽
50 534.92 ₽
Maxim Integrated
Low-Side
Independent
2
N-Channel, P-Channel MOSFET
4.5 V ~ 18 V
0.8V, 2V
2A, 2A
Non-Inverting
25ns, 20ns
-40 ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
1 707.92 ₽
10 672.13 ₽
25 626.39 ₽
50 606.51 ₽
Maxim Integrated
Tube
Low-Side
Independent
2
N-Channel, P-Channel MOSFET
4.5 V ~ 18 V
0.8V, 2.4V
1.5A, 1.5A
Inverting, Non-Inverting
20ns, 20ns
0 ~ 70°C (TA)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
1 749.68 ₽
10 711.90 ₽
25 664.17 ₽
50 642.30 ₽
Maxim Integrated
Tube
Low-Side
Independent
2
N-Channel, P-Channel MOSFET
4.5 V ~ 18 V
0.8V, 2.4V
1.5A, 1.5A
Inverting, Non-Inverting
20ns, 20ns
-40 ~ 85°C (TA)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP